IndiumV3, Main, Repository, bibRecord, 000102

Impact of Ga/(In + Ga) profile in Cu(In,Ga)Se2 prepared by multi-layer precursor method on its cell performance

Identifieur interne : 000102 ( Main/Repository ); précédent : 000101; suivant : 000103

Impact of Ga/(In + Ga) profile in Cu(In,Ga)Se2 prepared by multi-layer precursor method on its cell performance

Auteurs : RBID : Pascal:14-0095801

Descripteurs français

Pascal (Inist)
- Précurseur, Dispositif couche mince, Couche mince, Evaporation, Résultat expérimental, Charge espace, Cellule solaire, Cuivre, Indium, Gallium, Séléniure, Multicouche, 8460J.
Wicri :
- concept : Cuivre.

English descriptors

KwdEn :
- Copper, Evaporation, Experimental result, Gallium, Indium, Multiple layer, Precursor, Selenides, Solar cell, Space charge, Thin film, Thin film device.

Abstract

Cu(In,Ga)Se₂ (CIGS) is one of the most promising materials to fabricate low-cost and high-efficiency thin film solar cells. In this work, CIGS films were deposited by the so-called "multi-layer precursor method" using multi-layer co-evaporation of material sources. Based on the simulated and experimental results, the optimum averaged Ga/III, Ga/(In + Ga), in space charge region (SCR) controlling the carrier recombination near the junction and back surface Ga/III grading forming back surface field have drastic influence on cell performance. The CIGS absorber layer with double Ga/III grading profile (averaged Ga/III in SCR; 0.38 and the height of the back surface Ga/III grading; 0.33) is readily achieved by multi-layer precursor method. This leads to the improvement of efficiency of the CIGS solar cell up to 15.30% without anti-reflective layer.

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Pascal:14-0095801

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Impact of Ga/(In + Ga) profile in Cu(In,Ga)Se<sub>2 </sub>
prepared by multi-layer precursor method on its cell performance</title>
<author><name sortKey="Chantana, Jakapan" uniqKey="Chantana J">Jakapan Chantana</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi</s1>
<s2>Kusatsu, Shiga 525-8577</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Kusatsu, Shiga 525-8577</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Murata, Masashi" uniqKey="Murata M">Masashi Murata</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi</s1>
<s2>Kusatsu, Shiga 525-8577</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Kusatsu, Shiga 525-8577</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Higuchi, Takashi" uniqKey="Higuchi T">Takashi Higuchi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi</s1>
<s2>Kusatsu, Shiga 525-8577</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>7 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Kusatsu, Shiga 525-8577</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Watanabe, Taichi" uniqKey="Watanabe T">Taichi Watanabe</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Environment & Energy Research Center, Nitto Denko Corporation, 2-8 Yamadaoka</s1>
<s2>Suita, Osaka 565-0871</s2>
<s3>JPN</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Suita, Osaka 565-0871</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Teraji, Seiki" uniqKey="Teraji S">Seiki Teraji</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Environment & Energy Research Center, Nitto Denko Corporation, 2-8 Yamadaoka</s1>
<s2>Suita, Osaka 565-0871</s2>
<s3>JPN</s3>
<sZ>4 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Suita, Osaka 565-0871</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kawamura, Kazunori" uniqKey="Kawamura K">Kazunori Kawamura</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Environment & Energy Research Center, Nitto Denko Corporation, 2-8 Yamadaoka</s1>
<s2>Suita, Osaka 565-0871</s2>
<s3>JPN</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Suita, Osaka 565-0871</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Minemoto, Takashi" uniqKey="Minemoto T">Takashi Minemoto</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi</s1>
<s2>Kusatsu, Shiga 525-8577</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Kusatsu, Shiga 525-8577</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">14-0095801</idno>
<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0095801 INIST</idno>
<idno type="RBID">Pascal:14-0095801</idno>
<idno type="wicri:Area/Main/Corpus">000029</idno>
<idno type="wicri:Area/Main/Repository">000102</idno>
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<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper</term>
<term>Evaporation</term>
<term>Experimental result</term>
<term>Gallium</term>
<term>Indium</term>
<term>Multiple layer</term>
<term>Precursor</term>
<term>Selenides</term>
<term>Solar cell</term>
<term>Space charge</term>
<term>Thin film</term>
<term>Thin film device</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Précurseur</term>
<term>Dispositif couche mince</term>
<term>Couche mince</term>
<term>Evaporation</term>
<term>Résultat expérimental</term>
<term>Charge espace</term>
<term>Cellule solaire</term>
<term>Cuivre</term>
<term>Indium</term>
<term>Gallium</term>
<term>Séléniure</term>
<term>Multicouche</term>
<term>8460J</term>
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<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Cu(In,Ga)Se<sub>2</sub>
 (CIGS) is one of the most promising materials to fabricate low-cost and high-efficiency thin film solar cells. In this work, CIGS films were deposited by the so-called "multi-layer precursor method" using multi-layer co-evaporation of material sources. Based on the simulated and experimental results, the optimum averaged Ga/III, Ga/(In + Ga), in space charge region (SCR) controlling the carrier recombination near the junction and back surface Ga/III grading forming back surface field have drastic influence on cell performance. The CIGS absorber layer with double Ga/III grading profile (averaged Ga/III in SCR; 0.38 and the height of the back surface Ga/III grading; 0.33) is readily achieved by multi-layer precursor method. This leads to the improvement of efficiency of the CIGS solar cell up to 15.30% without anti-reflective layer.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Impact of Ga/(In + Ga) profile in Cu(In,Ga)Se<sub>2 </sub>
prepared by multi-layer precursor method on its cell performance</s1>
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<fA11 i1="01" i2="1"><s1>CHANTANA (Jakapan)</s1>
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<fA11 i1="02" i2="1"><s1>MURATA (Masashi)</s1>
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<fA11 i1="03" i2="1"><s1>HIGUCHI (Takashi)</s1>
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<fA11 i1="04" i2="1"><s1>WATANABE (Taichi)</s1>
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<fA11 i1="05" i2="1"><s1>TERAJI (Seiki)</s1>
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<fA11 i1="06" i2="1"><s1>KAWAMURA (Kazunori)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>MINEMOTO (Takashi)</s1>
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<fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi</s1>
<s2>Kusatsu, Shiga 525-8577</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>7 aut.</sZ>
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<fA14 i1="02"><s1>Environment & Energy Research Center, Nitto Denko Corporation, 2-8 Yamadaoka</s1>
<s2>Suita, Osaka 565-0871</s2>
<s3>JPN</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<fA20><s1>499-502</s1>
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<fA66 i1="01"><s0>NLD</s0>
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<fC01 i1="01" l="ENG"><s0>Cu(In,Ga)Se<sub>2</sub>
 (CIGS) is one of the most promising materials to fabricate low-cost and high-efficiency thin film solar cells. In this work, CIGS films were deposited by the so-called "multi-layer precursor method" using multi-layer co-evaporation of material sources. Based on the simulated and experimental results, the optimum averaged Ga/III, Ga/(In + Ga), in space charge region (SCR) controlling the carrier recombination near the junction and back surface Ga/III grading forming back surface field have drastic influence on cell performance. The CIGS absorber layer with double Ga/III grading profile (averaged Ga/III in SCR; 0.38 and the height of the back surface Ga/III grading; 0.33) is readily achieved by multi-layer precursor method. This leads to the improvement of efficiency of the CIGS solar cell up to 15.30% without anti-reflective layer.</s0>
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<s5>01</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>03</s5>
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<fC03 i1="04" i2="X" l="FRE"><s0>Evaporation</s0>
<s5>04</s5>
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<fC03 i1="04" i2="X" l="ENG"><s0>Evaporation</s0>
<s5>04</s5>
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<fC03 i1="04" i2="X" l="SPA"><s0>Evaporación</s0>
<s5>04</s5>
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<fC03 i1="05" i2="X" l="FRE"><s0>Résultat expérimental</s0>
<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s2>NC</s2>
<s5>08</s5>
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<fC03 i1="08" i2="X" l="ENG"><s0>Copper</s0>
<s2>NC</s2>
<s5>08</s5>
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<s2>NC</s2>
<s5>08</s5>
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<s2>NC</s2>
<s5>09</s5>
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<s2>NC</s2>
<s5>09</s5>
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<s2>NC</s2>
<s5>09</s5>
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<fC03 i1="10" i2="X" l="FRE"><s0>Gallium</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>10</s5>
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<fC03 i1="10" i2="X" l="ENG"><s0>Gallium</s0>
<s2>NC</s2>
<s2>FX</s2>
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<s2>NA</s2>
<s5>11</s5>
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<s2>NA</s2>
<s5>11</s5>
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<s2>NA</s2>
<s5>11</s5>
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<s5>15</s5>
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<s5>15</s5>
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<s5>15</s5>
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<fN44 i1="01"><s1>OTO</s1>
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Impact of Ga/(In + Ga) profile in Cu(In,Ga)Se2 prepared by multi-layer precursor method on its cell performance

Impact of Ga/(In + Ga) profile in Cu(In,Ga)Se2 prepared by multi-layer precursor method on its cell performance

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri